CHARGE RELEASE OF LANTHANUM-DOPED LEAD-ZIRCONATE-TITANATE STANNATE ANTIFERROELECTRIC THIN-FILMS

The charge release speed and backward phase switching time of lanthanu m-doped lead zirconate titanate stannate antiferroelectric thin films were investigated by directly measuring the switching current upon rem oval of the applied electric field. The backward switching time is abo ut 6 ns. The maximum switching current density can reach 9400 A/cm(2), and more than half of the stored charge can be released in 10 ns. The se results show that the obtained antiferroelectric thin films are ver y promising for decoupling capacitor applications in high speed multic hip modules. (C) 1998 American Institute of Physics.