ANALYSIS OF HIGH-FIELD HOPPING TRANSPORT IN A-SI1-YTAY-H - BASED ON THE EFFECTIVE TEMPERATURE MODEL

An analysis of high field hopping transport in a-Si1-yTay:H based on t he effective temperature model is presented. Samples of a-Si1-yTay:H i n sandwich configuration were prepared by sputtering in Ar/H-2 (5:1). High field measurements were made for temperatures T-M between 125 and 10 K with electric fields F from 1.0 x 10(5) to 7.5 x 10(7) Vm(-1). E xperimental values of the effective temperature T-eff were obtained in conformity with the formula: sigma(T-eff; F congruent to 0) = sigma(T -M, F). Theoretical values of T-eff were calculated with the formula: T-eff(2) = T-M(2) + (0.6:eaF/k(B))(2). The analysis was carried out fo r two a-Si1-yTay:H samples: S5 and S6 with y = 0.0045 and 0.009, respe ctively. The results show a slight increase of the localisation length a with increasing both T-M and F. The values obtained for a (4.5 x 10 (-10) m for the sample S5 and 3.7 x 10(-10) m for the sample S6) are c ompar able with those obtained from analysis of the de low field data ard are in partial agreement with those derived from the analysis of t he ac low field data.