QUANTUM QUASI-1D TRANSPORT IN QUASI-2D HIGHLY DISORDERED STRUCTURES

Gate voltage dependences of conductivity and Hall effect cf Si-MNOS st ructures with high concentration of built-in chargee were measured. Th ey revealed drastic distinctions between ''short'' (in comparison with the correlation length of percolation cluster) and ''long'' structure behaviour. Mesoscopic phenomena accompanied by quantization of conduc tance were found to be characteristic feature of ''short'' (channel le ngth of about 5 mu m) structures. The threshold behaviour of the Hall effect was simultaneously observed which corresponded to the conductan ce of about e(2)/h. Observed features are attributed to the formation of a quasi-1D conducting chain and indicate the occurrence of the tran sition from 1D to 2D transport.