STRONGLY ANISOTROPIC HOPPING CONDUCTION IN (GA, MN)AS GAAS/

Citation
S. Katsumoto et al., STRONGLY ANISOTROPIC HOPPING CONDUCTION IN (GA, MN)AS GAAS/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 115-118
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
205
Issue
1
Year of publication
1998
Pages
115 - 118
Database
ISI
SICI code
0370-1972(1998)205:1<115:SAHCI(>2.0.ZU;2-Y
Abstract
We report magnetotransport of (Ga, Mn)As below 1 K in the reentrant in sulating phase. The external magnetic Field drove the samples from the strongly insulating regime to the variable range hopping one. Below 1 K, the resistivity was strongly anisotropic (by about two orders of m agnitude). The conduction along the highly resistive direction ([1(1) over bar0$]) was well described by variable range hopping in the soft Coulomb gap regime while that along the lower resistive direction ([1( 1) over bar0$]) seemed to undergo an insulator-to-metal transition by the external magnetic Field. The result may be a key to solve the prob lem of reentrant metal-to-insulator transition in (Ga, Mn) As with inc reasing Mn content.