DISPERSIVE TRANSPORT DUE TO HOPPING ON BAND-EDGE FLUCTUATING WITH SELF-AFFINE FRACTAL DIMENSION

Transport due to the hopping of electrons or self-trapped (small-polar on-like) electrons at the band edge in the presence of long-range fluc tuations with self-affine fractal dimensions! has been investigated by Monte Carlo simulation. It has been shown that the transport at the b and edge with high fractal dimensions changes with temperature from th e dispersive type to the Gaussian one, while with low fractal dimensio ns it is Gaussian even at low temperatures. In addition, the results s uggest that large thermal activation energies of carriers in amorphous semiconductors are explained by the hopping of the self-trapped carri ers.