HOPPING IN PSEUDOMORPHIC INGAAS HEMTS - A FLUCTUATION DOMINATED SYSTEM

Authors
PEARSON JL LONG AR HOLLAND MC
Citation
Jl. Pearson et al., HOPPING IN PSEUDOMORPHIC INGAAS HEMTS - A FLUCTUATION DOMINATED SYSTEM, Physica status solidi. b, Basic research, 205(1), 1998, pp. 135-139
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
205
Issue
1
Year of publication
1998
Pages
135 - 139
Database
ISI
SICI code
0370-1972(1998)205:1<135:HIPIH->2.0.ZU;2-R
Abstract
We have studied electron transport in InGaAs-channel pseudomorphic HEM Ts at low temperatures. Mobility measurements in the metallic region s uggest that strong potential fluctuations limit the conductivity. Thes e also lead to distinctive hopping behaviour, characterised by a high temperature activated region and a relatively high conductance region at low temperatures which we ascribe to tunnelling between pools of el ectrons. There is no evidence for variable range hopping in the region studied.