Jh. Zhou et al., ON THE TRANSPORT-PROPERTIES OF MICROCRYSTALLINE SILICON AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 147-150
The dark and photoconductivity have been measured over a wide temperat
ure range with a high crystallinity hydrogenated microcrystalline sili
con (mu c-Si:R) sample. It is the first time that photoconductivity ov
er such a broad temperature range (down to 20 K) has been reported. St
riking similarities in the temperature dependences of the dark, and ph
otoconductivity between mu c-Si:H and some well studied materials! suc
h as hydrogenated amorphous silicon, suggest that at low temperatures
hopping of carriers between localized states dominates the transport p
roperties of mu c-Si:H.