ON THE TRANSPORT-PROPERTIES OF MICROCRYSTALLINE SILICON AT LOW-TEMPERATURES

Citation
Jh. Zhou et al., ON THE TRANSPORT-PROPERTIES OF MICROCRYSTALLINE SILICON AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 147-150
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
205
Issue
1
Year of publication
1998
Pages
147 - 150
Database
ISI
SICI code
0370-1972(1998)205:1<147:OTTOMS>2.0.ZU;2-G
Abstract
The dark and photoconductivity have been measured over a wide temperat ure range with a high crystallinity hydrogenated microcrystalline sili con (mu c-Si:R) sample. It is the first time that photoconductivity ov er such a broad temperature range (down to 20 K) has been reported. St riking similarities in the temperature dependences of the dark, and ph otoconductivity between mu c-Si:H and some well studied materials! suc h as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport p roperties of mu c-Si:H.