Singlet small bipolarons, observed in boron carbides, may be associate
d with paired holes in tile states that bind the atoms of boron-rich p
olyhedra together. Such ''internal'' bonding electrons are well approx
imated as being confined to the surface of tile sphere that circumscri
bes the polyhedron. These bonding states form a succession of levels o
f orbital angular moment I with 2(2l + 1)-fold degeneracy. Valence ban
ds are ''filled'', yielding insulating behavior,when the lowest crysta
l-field-split sub-bands are filled. By deforming the polyhedron, singl
et hole: pairs, produced by removing a pair of electrons from ''filled
'' internal bonding states, carl be stabilized. Our microscopic treatm
ent finds carrier-induced softening, absent in standard as hoc models.
This softening facilitates bipolaron formation and accounts for the a
nomalously large thermoelectric powers observed from bipolarons in bor
on carbides.