BIPOLARON FORMATION IN ICOSAHEDRAL AND OCTAHEDRAL BORIDES

Citation
D. Emin et al., BIPOLARON FORMATION IN ICOSAHEDRAL AND OCTAHEDRAL BORIDES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 311-313
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
205
Issue
1
Year of publication
1998
Pages
311 - 313
Database
ISI
SICI code
0370-1972(1998)205:1<311:BFIIAO>2.0.ZU;2-Q
Abstract
Singlet small bipolarons, observed in boron carbides, may be associate d with paired holes in tile states that bind the atoms of boron-rich p olyhedra together. Such ''internal'' bonding electrons are well approx imated as being confined to the surface of tile sphere that circumscri bes the polyhedron. These bonding states form a succession of levels o f orbital angular moment I with 2(2l + 1)-fold degeneracy. Valence ban ds are ''filled'', yielding insulating behavior,when the lowest crysta l-field-split sub-bands are filled. By deforming the polyhedron, singl et hole: pairs, produced by removing a pair of electrons from ''filled '' internal bonding states, carl be stabilized. Our microscopic treatm ent finds carrier-induced softening, absent in standard as hoc models. This softening facilitates bipolaron formation and accounts for the a nomalously large thermoelectric powers observed from bipolarons in bor on carbides.