NONEQUILIBRIUM TRANSPORT IN ANDERSON INSULATIONS

Citation
A. Vaknin et al., NONEQUILIBRIUM TRANSPORT IN ANDERSON INSULATIONS, Physica status solidi. b, Basic research, 205(1), 1998, pp. 395-398
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
205
Issue
1
Year of publication
1998
Pages
395 - 398
Database
ISI
SICI code
0370-1972(1998)205:1<395:NTIAI>2.0.ZU;2-7
Abstract
We report observations of glass behavior of an electronic system in an Anderson insulator. The system used is a MOSFET-like structure with a thin film of In2O3-x serving as the active element. The glassy behavi or is reflected as a local minimum at the 'cool-down' gate voltage in the conductance vs. gate-voltage, G(V-g) sweeps. Relaxation is monitor ed as a function of temperature and film disorder. Studying certain fe atures of the G(V-g) minima reveals that interactions are important in the relaxation process.