ANALYSIS OF ADDITIVES ON BEO-DOPED SIC CE RAMICS BY SECONDARY-ION MASS-SPECTROSCOPY

Authors
TANAKA S SAKAGUCHI I YASUTOMI Y MIYATA M SAWAI Y TAKAHASHI K
Citation
S. Tanaka et al., ANALYSIS OF ADDITIVES ON BEO-DOPED SIC CE RAMICS BY SECONDARY-ION MASS-SPECTROSCOPY, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 103(8), 1995, pp. 870-872
Citations number
4
Categorie Soggetti
Material Science, Ceramics
Journal title
Nippon Seramikkusu Kyokai gakujutsu ronbunshi → ACNP
ISSN journal
09145400
Volume
103
Issue
8
Year of publication
1995
Pages
870 - 872
Database
ISI
SICI code
0914-5400(1995)103:8<870:AOAOBS>2.0.ZU;2-N
Abstract
The elemental distribution in BeO-doped pressureless sintered SiC cera mics, with high thermal conductivity (270 W/m . K) and high electrical resistivity (4 x 10(11) Omega . m) was investigated by secondary ion mass spectroscopy (SLMS). Intense image of oxygen was observed at the grain boundaries and weak image of Be was detected very close to the p ositions of oxygen. The intensity contrast of these two elements do no t always coincide at all positions. These results suggest that the add itive BeO exists at grain boundaries as BeO and/or nonstoichiometric B e oxide.