PHOTOEXCITED CARRIER DIFFUSION DEPENDENCE OF DIFFERENTIAL REFLECTION DYNAMICS IN INASXP1-X INP (X-LESS-THAN-OR-EQUAL-TO-0.35) STRAINED-MULTIPLE-QUANTUM WELLS/

Using the pump-probe technique, we have observed time-resolved differe ntial reflection in InAsxP1-x/InP (x less than or equal to 0.35) strai ned-multiple-quantum wells (SMQWs) and also examined the photoluminesc ence spectra for the samples studied. The experimental results show th at barrier height, interface roughness and quantum-well width influenc e strongly the differential reflection dynamics. From the experimental results, we have demonstrated that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to the sample surface plays a dominant role in determining the differential reflect ion dynamics. (C) 1998 Elsevier Science Ltd.