LUMINESCENCE CHARACTERISTICS OF ZNS-CU THIN-FILM ELECTROLUMINESCENT DEVICES FABRICATED

Citation
Di. Kim et al., LUMINESCENCE CHARACTERISTICS OF ZNS-CU THIN-FILM ELECTROLUMINESCENT DEVICES FABRICATED, Journal of materials science. Materials in electronics, 9(1), 1998, pp. 31-34
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
9
Issue
1
Year of publication
1998
Pages
31 - 34
Database
ISI
SICI code
0957-4522(1998)9:1<31:LCOZTE>2.0.ZU;2-W
Abstract
A ZnS:Cu electroluminescent (EL) device was fabricated by sputtering a nd its luminescence properties were examined. The structure of the fab ricated device was glass/SixNy/ZnS phosphor/SixNy/Al. The luminescence spectrum of the device showed two peaks, one blue and the other yello w. The blue peak is created by excitation and recombination of Cu atom s, and can be used for creating blue EL devices. (C) 1998 Chapman & Ha ll.