A. Ohtake et al., DEFECT GENERATION IN LAYER-BY-LAYER-GROWN ZNSE FILMS ON TE-TERMINATEDGAAS(001) SURFACES, Physical review. B, Condensed matter, 57(3), 1998, pp. 1410-1413
We have studied the effect of the Te termination of the GaAs(001) surf
ace on the growth mode and defect generation in the heteroepitaxy of Z
nSe. High densities of faulted defects are generated in the ZnSe film
grown in a layer-by-layer mode on the Te-terminated GaAs surface, rela
ting closely to the formation of a thin Ga2Te3-like interface layer. T
he defect density was found to increase with substrate temperature for
an exposure of Te on GaAs(001) up to 500 degrees C. However, the defe
ct generation is suppressed by thermal annealing at a higher temperatu
re prior to the ZnSe growth, which is ascribed to the change in the su
rface reconstruction of Te-terminated GaAs(100) caused by the annealin
g.