DEFECT GENERATION IN LAYER-BY-LAYER-GROWN ZNSE FILMS ON TE-TERMINATEDGAAS(001) SURFACES

Citation
A. Ohtake et al., DEFECT GENERATION IN LAYER-BY-LAYER-GROWN ZNSE FILMS ON TE-TERMINATEDGAAS(001) SURFACES, Physical review. B, Condensed matter, 57(3), 1998, pp. 1410-1413
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
3
Year of publication
1998
Pages
1410 - 1413
Database
ISI
SICI code
0163-1829(1998)57:3<1410:DGILZF>2.0.ZU;2-6
Abstract
We have studied the effect of the Te termination of the GaAs(001) surf ace on the growth mode and defect generation in the heteroepitaxy of Z nSe. High densities of faulted defects are generated in the ZnSe film grown in a layer-by-layer mode on the Te-terminated GaAs surface, rela ting closely to the formation of a thin Ga2Te3-like interface layer. T he defect density was found to increase with substrate temperature for an exposure of Te on GaAs(001) up to 500 degrees C. However, the defe ct generation is suppressed by thermal annealing at a higher temperatu re prior to the ZnSe growth, which is ascribed to the change in the su rface reconstruction of Te-terminated GaAs(100) caused by the annealin g.