ELECTRONIC-STRUCTURE OF THE DEEP BORON ACCEPTOR IN BORON-DOPED 6H-SIC

A high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in 6H-SiC. The re sults support a model in which the deep boron acceptor consists of a b oron on a silicon position with an adjacent carbon vacancy. The carbon vacancy combines with a boron along the hexagonal c axis. It is concl uded that 70-90% of the spin density resides in the silicon dangling b onds surrounding the vacancy and another 9% on the neighboring carbon atoms. The spin-density distribution is more localized than in the cas e of the shallow boron acceptor as deduced from the ENDOR experiments.