ELECTRON-OPTICAL-PHONON INTERACTION EFFECT ON THE INTRADONOR TRANSITION ENERGIES IN DOPED GAAS-ALXGA1-XAS QUANTUM-WELLS

Citation
Fap. Osorio et al., ELECTRON-OPTICAL-PHONON INTERACTION EFFECT ON THE INTRADONOR TRANSITION ENERGIES IN DOPED GAAS-ALXGA1-XAS QUANTUM-WELLS, Physical review. B, Condensed matter, 57(3), 1998, pp. 1644-1648
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
3
Year of publication
1998
Pages
1644 - 1648
Database
ISI
SICI code
0163-1829(1998)57:3<1644:EIEOTI>2.0.ZU;2-D
Abstract
We report a calculation of 1s --> 2p(+) transition energies of a donor impurity magnetopolaron located in GaAs quantum wells in the presence of an external magnetic field. The impurity levels are obtained throu gh a variational method by choosing a Gaussian trial wave function wit h only one variational parameter. Our theoretical results can account for the experimental data for the center-donor system when the approxi mation of a single well is used. We also found no evidence for the pre sence of electron-nonbulk-phonon interaction needed to understand this problem.