GIXRD AND XPS STUDY OF THE ION-BEAM MIXED AU SI(111) SYSTEM/

Grazing Incidence X-ray diffraction (GIXRD) and the X-ray Photoelectro n Spectroscopy (XPS) studies were carried out on ion-beam irradiated A u/Si(1 1 1) system at boom temperature (RT) and elevated temperature. The gold films of 500 Angstrom were vapour deposited on Si(1 1 1) keep ing the substrate at room temperature. The samples were irradiated wit h 120 keV Ar+ ions beams to a dose of 1 x 10(16) ions cm(-2) at differ ent temperatures. GIXRD studies show the formation of Au5Si2 phase in the sample irradiated at 150 degrees C. XPS studies show a distinct Au 4f(7/2) peak corresponding to the silicide phase with binding energy higher than that of pure gold. (C) 1998 Elsevier Science Ltd.