Xz. Ding et al., EFFECTS OF IMPURITIES ON DIELECTRIC-PROPERTIES OF FLUOROZIRCONATE GLASSES AT MICROWAVE-FREQUENCIES, Journal of applied physics, 83(3), 1998, pp. 1177-1182
The dielectric properties of fluorozirconate glasses doped with differ
ent impurities have been investigated in the frequency region of 3.0-1
2.5 GHz using a microwave network analyzer. For glasses containing oxi
de impurities such as PbO, SiO2, and TiO2, the position of the dielect
ric resonance, which is observed in the pure fluoride glass, shifts to
higher frequencies. Amplitudes of the resonance peaks also become muc
h smaller. The oxide impurities are observed to exist as large numbers
of tiny precipitates in the glasses. When the glasses are doped with
InF3, the position of the resonance peak shifts to a higher frequency
but the amplitude of the peak remains unchanged. The InF3 may be subst
ituted for AlF3 in the glasses. A higher half-resonance width is obser
ved in the doped fluorozirconate glasses. The changes in the dielectri
c properties are attributed to the different behaviors of the impuriti
es, which affect the structural interunit vibration in the fluoride gl
asses. (C) 1998 American Institute of Physics. [S0021-8979(98)04802-6]
.