AMORPHOUS-SILICON BASED NIPIIN STRUCTURE FOR COLOR DETECTION

Hydrogenated amorphous silicon based nipiin three color detectors with a bias voltage controlled spectral response have been fabricated. The se band-gap and mobility-lifetime product engineered structures employ ed as two terminal devices exhibit a dynamic range above 95 dB. The ma ximum of the spectral response shifts by variation of the applied volt age. Three linearly independent spectral response curves can be extrac ted to generate a red-green-blue signal. Conventional spatial color se paration with optical filters is transferred into a voltage multiplexe d read out sequence. Bias voltage switching under different monochroma tic illumination and illumination switching-on transients for differen t bias voltages are carried out to investigate the time dependent beha vior of the photocurrent. Based on these results optimization criteria to accelerate the transient behavior and to determine the maximum fra me rate for color detection are presented. (C) 1998 American Institute of Physics. [S0021-8979(98)07901-8].