ELECTRON-CYCLOTRON-RESONANCE ASSISTED CHEMICAL-VAPOR-DEPOSITION OF CARBON NITRIDE FILMS ON DIAMOND

Citation
Kh. Wu et al., ELECTRON-CYCLOTRON-RESONANCE ASSISTED CHEMICAL-VAPOR-DEPOSITION OF CARBON NITRIDE FILMS ON DIAMOND, Journal of applied physics, 83(3), 1998, pp. 1702-1704
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
3
Year of publication
1998
Pages
1702 - 1704
Database
ISI
SICI code
0021-8979(1998)83:3<1702:EACOC>2.0.ZU;2-O
Abstract
Carbon nitride films were prepared using an electron cyclotron resonan ce enhanced chemical vapor deposition apparatus. A two-step mode was a dopted in which a diamond layer was first deposited onto the substrate (Si or Mo), and then the carbon nitride films were grown. Detailed x- ray photoelectron analyses show that the carbon and nitrogen atoms hav e formed a nonpolar covalent bond. The nitrogen concentrations in the films remain unchanged when the substrate temperatures vary from 100 t o 700 degrees C, which suggests that a stable phase has formed. (C) 19 98 American Institute of Physics. [S0021-8979(98)04003-1].