De. Carlson et K. Rajan, EVIDENCE FOR PROTON MOTION IN THE RECOVERY OF LIGHT-INDUCED DEGRADATION IN AMORPHOUS-SILICON SOLAR-CELLS, Journal of applied physics, 83(3), 1998, pp. 1726-1729
The light-induced degradation of amorphous silicon solar cells can be
reversed by: the application of a strong electric field in the dark, a
nd the rate of reversal increases with field strength, temperature, an
d light intensity. The activation energy for annealing the degradation
in the dark is reduced from about 1.34 eV under open circuit conditio
ns to 1.16 eV by applying a strong reverse bias. When the degraded cel
ls are exposed to intense illumination in addition to a strong reverse
bias, the activation energy for the recovery of the performance decre
ases to about 0.77 eV. Both the light-induced degradation and the reve
rsal of the degradation can be explained by a model based on proton mo
tion within a metastable defect complex. (C) 1998 American Institute o
f Physics.[S0021-8979(98)04203-0].