EVIDENCE FOR PROTON MOTION IN THE RECOVERY OF LIGHT-INDUCED DEGRADATION IN AMORPHOUS-SILICON SOLAR-CELLS

Citation
De. Carlson et K. Rajan, EVIDENCE FOR PROTON MOTION IN THE RECOVERY OF LIGHT-INDUCED DEGRADATION IN AMORPHOUS-SILICON SOLAR-CELLS, Journal of applied physics, 83(3), 1998, pp. 1726-1729
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
3
Year of publication
1998
Pages
1726 - 1729
Database
ISI
SICI code
0021-8979(1998)83:3<1726:EFPMIT>2.0.ZU;2-7
Abstract
The light-induced degradation of amorphous silicon solar cells can be reversed by: the application of a strong electric field in the dark, a nd the rate of reversal increases with field strength, temperature, an d light intensity. The activation energy for annealing the degradation in the dark is reduced from about 1.34 eV under open circuit conditio ns to 1.16 eV by applying a strong reverse bias. When the degraded cel ls are exposed to intense illumination in addition to a strong reverse bias, the activation energy for the recovery of the performance decre ases to about 0.77 eV. Both the light-induced degradation and the reve rsal of the degradation can be explained by a model based on proton mo tion within a metastable defect complex. (C) 1998 American Institute o f Physics.[S0021-8979(98)04203-0].