LOW-TEMPERATURE CLEAVED-EDGE POLARIZED-PHOTOLUMINESCENCE STUDIES OF SPONTANEOUSLY ORDERED GAINP2 ALLOYS

Authors
CHEONG HM ZHANG Y MASCARENHAS A GEISZ JF OLSON JM
Citation
Hm. Cheong et al., LOW-TEMPERATURE CLEAVED-EDGE POLARIZED-PHOTOLUMINESCENCE STUDIES OF SPONTANEOUSLY ORDERED GAINP2 ALLOYS, Journal of applied physics, 83(3), 1998, pp. 1773-1775
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
3
Year of publication
1998
Pages
1773 - 1775
Database
ISI
SICI code
0021-8979(1998)83:3<1773:LCPSOS>2.0.ZU;2-D
Abstract
We report low-temperature polarized-photoluminescence (PL) measurement s on (110) cleaved edges of ordered GaInP2 alloys. By comparing the in tensity of the forbidden PL polarized along the ordering axis with tha t of the allowed PL polarized orthogonal to the ordering axis, we stud y the effect of coulomb interaction on the excitonic transition rate. The experimentally obtained polarization ratios of 13-20 are consisten t with calculations based on an eight-band k . p model. (C) 1998 Ameri can Institute of Physics. [S0021-8979(98)08903-8].