MAGNETORESISTANCE OSCILLATIONS DUE TO CHANGING EFFECTS IN DOUBLE FERROMAGNETIC TUNNEL-JUNCTIONS

Authors
Citation
J. Barnas et A. Fert, MAGNETORESISTANCE OSCILLATIONS DUE TO CHANGING EFFECTS IN DOUBLE FERROMAGNETIC TUNNEL-JUNCTIONS, Physical review letters, 80(5), 1998, pp. 1058-1061
Citations number
16
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
5
Year of publication
1998
Pages
1058 - 1061
Database
ISI
SICI code
0031-9007(1998)80:5<1058:MODTCE>2.0.ZU;2-C
Abstract
Electron tunneling in a double junction consisting of two ferromagneti c electrodes, with a small ferromagnetic metallic grain in between, is analyzed theoretically in the Coulomb blockade regime. A new phenomen on, that of oscillations in tunneling magnetoresistance due to discret e charging effects, is predicted. The corresponding oscillation period depends on the charging energy, and the oscillations disappear when b oth junctions have the same spin asymmetry. The interplay of the oscil lations and a nonoscillatory voltage dependence of the magnetoresistan ce is also analyzed. [S0031-9007(97)05142-9].