STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES

Citation
Ja. Prieto et al., STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, Physical review letters, 80(5), 1998, pp. 1094-1097
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
5
Year of publication
1998
Pages
1094 - 1097
Database
ISI
SICI code
0031-9007(1998)80:5<1094:SQOOIC>2.0.ZU;2-X
Abstract
Strain-induced quenching of optimal transitions has been found in capp ed self-assembled quantum dot structures. Light absorption at the E-1 and E-1+ Delta(1) critical points of InSb islands buried in InP disapp ears for nominal InSb thicknesses lower than 10 monolayers as a conseq uence of the strain produced inside the islands bq the cap layer. Cert ainly, this strain increases as the InSb deposition diminishes. changi ng the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E- 1 and E-1 + Delta(1) transitions. [S0031-9007(97)05086-2].