Ja. Prieto et al., STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, Physical review letters, 80(5), 1998, pp. 1094-1097
Strain-induced quenching of optimal transitions has been found in capp
ed self-assembled quantum dot structures. Light absorption at the E-1
and E-1+ Delta(1) critical points of InSb islands buried in InP disapp
ears for nominal InSb thicknesses lower than 10 monolayers as a conseq
uence of the strain produced inside the islands bq the cap layer. Cert
ainly, this strain increases as the InSb deposition diminishes. changi
ng the band lineup of the system from type-I to type-II and therefore
drastically reducing the oscillator strengths of the island-related E-
1 and E-1 + Delta(1) transitions. [S0031-9007(97)05086-2].