SPIN-ON DOPING OF POROUS SILICON AND ITS EFFECT ON PHOTOLUMINESCENCE AND TRANSPORT CHARACTERISTICS

We have investigated a novel way to dope porous Si layers with (B) and /or (P) using the spin-on doping technique, Under certain conditions, pore filling by the dopant solution was measured to be near 90%-95% le ading to a homogeneous coverage of the porous skeleton, Near two order s of magnitude decrease in diode resistance was achievable following r apid thermal activation in a N-2 atmosphere of B only or B + P double doped porous Si. Photoluminescence (PL) intensities observed in B + P double doped porous layers were significant. Relative to as-prepared s amples, the PL intensities of double doped samples were weaker for por ous Si on n-type and stronger for porous Si formed on p-type Si. In bo th cases, the PL magnitudes after double doping were comparable. (C) 1 997 American Institute of Physics.