S. Sen et al., SPIN-ON DOPING OF POROUS SILICON AND ITS EFFECT ON PHOTOLUMINESCENCE AND TRANSPORT CHARACTERISTICS, Applied physics letters, 70(17), 1997, pp. 2253-2255
We have investigated a novel way to dope porous Si layers with (B) and
/or (P) using the spin-on doping technique, Under certain conditions,
pore filling by the dopant solution was measured to be near 90%-95% le
ading to a homogeneous coverage of the porous skeleton, Near two order
s of magnitude decrease in diode resistance was achievable following r
apid thermal activation in a N-2 atmosphere of B only or B + P double
doped porous Si. Photoluminescence (PL) intensities observed in B + P
double doped porous layers were significant. Relative to as-prepared s
amples, the PL intensities of double doped samples were weaker for por
ous Si on n-type and stronger for porous Si formed on p-type Si. In bo
th cases, the PL magnitudes after double doping were comparable. (C) 1
997 American Institute of Physics.