Mch. Liao et al., FABRICATION OF ZNSE QUANTUM DOTS UNDER VOLMER-WEBER MODE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(17), 1997, pp. 2256-2258
The possibility of fabricating quantum dots under Volmer-Weber growth
mode is investigated. Layers of ZnSe/ZnS were grown by metalorganic ch
emical vapor deposition on both Si and GaAs substrates. The images of
surface morphology, taken by atomic force microscopy, showed that the
layers were grown in three-dimensional islands. Blueshift was observed
in the photoluminescence spectra up to room temperature for these sam
ples. This blueshift was shown to originate from the ZnSe islands. The
effect of ZnSe growth duration was investigated. It was found that th
e blueshift increased with shorter ZnSe growth durations, but this nea
r band gap emission disappeared when the ZnSe growth duration was long
er than 5 s. Effects of quantum confinement and strain were considered
to resolve the origin of the blueshift. Our result suggests that carr
ier confinement plays a dominant role. (C) 1997 American Institute of
Physics.