HIGH-QUALITY GAAS QUANTUM WIRES GROWN BY FLOW-RATE MODULATION EPITAXY

Authors
HAMOUDI A OGURA M WANG XL OKADA T MATSUHATA H
Citation
A. Hamoudi et al., HIGH-QUALITY GAAS QUANTUM WIRES GROWN BY FLOW-RATE MODULATION EPITAXY, Applied physics A: Materials science & processing, 66(2), 1998, pp. 137-141
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Issue
2
Year of publication
1998
Pages
137 - 141
Database
ISI
SICI code
0947-8396(1998)66:2<137:HGQWGB>2.0.ZU;2-K
Abstract
Transmission electron microscopy, photoluminescence and photoluminesce nce excitation studies pointed out the significant impact of the flow rate modulation epitaxy technique in the growth of nanoscale quantum w ires. Our results confirmed experimentally its ability to grow GaAs qu antum wire layers of high crystalline and optical quality.