ION-BEAM ETCHING OF GAAS - INFLUENCE OF ETCHING PARAMETERS ON THE DEGREE OF RADIATION-DAMAGE

Authors
BORZENKO TB KOVAL YI KULIK LV LARIONOV AV
Citation
Tb. Borzenko et al., ION-BEAM ETCHING OF GAAS - INFLUENCE OF ETCHING PARAMETERS ON THE DEGREE OF RADIATION-DAMAGE, Applied physics letters, 70(17), 1997, pp. 2297-2299
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
17
Year of publication
1997
Pages
2297 - 2299
Database
ISI
SICI code
0003-6951(1997)70:17<2297:IEOG-I>2.0.ZU;2-G
Abstract
The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spe ctra study of GaAs/InGaAs/GaAs heterostructures with near surface quan tum wells. It was shown that the change of normal ion incidence to obl ique and the decrease of the sample temperature to that of liquid nitr ogen cause minimum radiation damage to GaAs. (C) 1997 American Institu te of Physics.