The electroluminescent properties of p-type porous silicon layers (p-P
SLs) in aqueous solutions can be significantly improved by the presenc
e of hydrogen peroxide, as demonstrated by the electroluminescence (EL
) and electrochemical results presented. The possible species responsi
ble for electron injection into the conduction band of porous silicon-
necessary for EL-are discussed in the light of these results. Particul
ar attention is paid to the possibilities of formation of HO2 during a
nodic treatments of p-PSLs or a reaction involving OH radicals and Si-
H bonds.