THE ORIGIN OF ELECTROLUMINESCENCE AT POROUS P-SILICON LAYERS-ELECTROLYTE INTERFACES

The electroluminescent properties of p-type porous silicon layers (p-P SLs) in aqueous solutions can be significantly improved by the presenc e of hydrogen peroxide, as demonstrated by the electroluminescence (EL ) and electrochemical results presented. The possible species responsi ble for electron injection into the conduction band of porous silicon- necessary for EL-are discussed in the light of these results. Particul ar attention is paid to the possibilities of formation of HO2 during a nodic treatments of p-PSLs or a reaction involving OH radicals and Si- H bonds.