SINGLE-ELECTRON CIRCUIT SIMULATION

Citation
S. Amakawa et al., SINGLE-ELECTRON CIRCUIT SIMULATION, IEICE transactions on electronics, E81C(1), 1998, pp. 21-29
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E81C
Issue
1
Year of publication
1998
Pages
21 - 29
Database
ISI
SICI code
0916-8524(1998)E81C:1<21:SCS>2.0.ZU;2-#
Abstract
Various techniques of single-electron circuit simulation are presented . The subjects include visualization of state probabilities, accurate yet reasonably fast steady-state analysis and SPICE-based high-speed s imulation for circuits composed of Single-Electron Transistors (SETs). The visualized state probabilities allow one to grasp the dynamics of a single-electron circuit intuitively. The new algorithm for steady-s tate analysis uses the master equation and Monte Carlo method in combi nation. We suppose this is the best way to perform steady-state analys is. The SPICE-based simulator significantly outperforms the convention al reference simulator in speed. It is, to the best of our knowledge, the only simulator that can simulate SET circuits for real application s. It also facilitates the study of the integration of SETs and MOSFET s.