FIELD-EFFECT TRANSISTORS COMPRISING MOLECULAR-BEAM DEPOSITED ALPHA,OMEGA-DI-HEXYL-HEXATHIENYLENE AND POLYMERIC INSULATOR

Authors
DIMITRAKOPOULOS CD FURMAN BK GRAHAM T HEGDE S PURUSHOTHAMAN S
Citation
Cd. Dimitrakopoulos et al., FIELD-EFFECT TRANSISTORS COMPRISING MOLECULAR-BEAM DEPOSITED ALPHA,OMEGA-DI-HEXYL-HEXATHIENYLENE AND POLYMERIC INSULATOR, Synthetic metals, 92(1), 1998, pp. 47-52
Citations number
33
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
92
Issue
1
Year of publication
1998
Pages
47 - 52
Database
ISI
SICI code
0379-6779(1998)92:1<47:FTCMDA>2.0.ZU;2-W
Abstract
Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited alpha,omega-di-hexyl-hexathienylene (DH6T) as the semic onductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm(2) V-1 s(-1) w ere obtained, which are the highest values obtained from thin-film tra nsistors of DH6T, (C) 1998 Published by Elsevier Science S.A.