Dh. Huang et Y. Yamamoto, PHYSICAL-MECHANISM OF HYDROGEN DEPOSITION FROM A SCANNING-TUNNELING-MICROSCOPY TIP, Applied physics A: Materials science & processing, 64(4), 1997, pp. 419-422
We report on the first successful deposition of individual hydrogen at
oms from a tungsten tip of a scanning tunneling microscope onto a mono
hydride Si(100)-2x1:H surface. Hydrogen atoms adsorbed on the tungsten
tip are first diffused to the tip apex from the surroundings of the t
ip by the application of +3.5 V bias to the sample for approximate to
300 ms, and subsequently deposited onto the surface by the application
of -8.5 V 300 ms pulses to the sample. The physical mechanisms involv
ed are hydrogen diffusion on the tip via field-gradient-induced diffus
ion and hydrogen deposition due to electronic excitation.