SINGLE-FEEDBACK AND DUAL-FEEDBACK TRANSIMPEDANCE AMPLIFIERS IMPLEMENTED BY SIGE HBT TECHNOLOGY

Authors
RIEH JS QASAIMEH O LU LH YANG K KATEHI LPB BHATTACHARYA P CROKE ET
Citation
Js. Rieh et al., SINGLE-FEEDBACK AND DUAL-FEEDBACK TRANSIMPEDANCE AMPLIFIERS IMPLEMENTED BY SIGE HBT TECHNOLOGY, IEEE microwave and guided wave letters, 8(2), 1998, pp. 63-65
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
8
Issue
2
Year of publication
1998
Pages
63 - 65
Database
ISI
SICI code
1051-8207(1998)8:2<63:SADTAI>2.0.ZU;2-I
Abstract
Monolithically integrated SiGe/Si heterojunction bipolar transistor (H BT) transimpedance amplifiers, with single-and dual-feedback configura tions, have been designed, fabricated, and characterized, The single-f eedback amplifier showed transimpedance gain and bandwidth of 45.2 dB Omega and 3.2 GHz, respectively, The dual-feedback version exhibits im proved gain and bandwidth of 47.4 dB Omega and 3.3 GHz, respectively, Their performance characteristics are excellent in terms of their appl ication in communication systems.