BEST COMBINATION BETWEEN POWER-DENSITY, EFFICIENCY, AND GAIN AT V-BAND WITH AN INP-BASED PHEMT STRUCTURE

In this letter, we report on the state-of-the-art combination at V-ban d between simultaneously power density (370 mW/mm), power-added effici ency (28.3%), and power gain (5.2 dB) of InP pseudomorphic HEMT's bias ed at a low drain voltage of 2 V. The performance of these double delt a-doped pseudomorphic AlInAs/GaInAs HEMT's on INP with an original str ain compensated channel was measured at 60 GHz. This demonstrates a go od potentiality for low-voltage applications in order to reduce the po wer supply of systems.