For integration in receivers at 77 GHz, three passive mixers, a balanc
ed diode mixer, a single ended and a balanced resistive mixer, as well
as an active single-ended gate mixer have been realized in coplanar 0
.15-mu m PM-HEMT technology on GaAs. The passive mixers achieved conve
rsion losses of about 9 dB. The resistive mixers required an LO power
of only 3 dBm and the diode mixer 10 dBm for optimum conversion, The g
ate mixer obtained a conversion gain of 1 dB for an LO power of 6 dBm,
but showed higher sensitivity to the IF load.