THE SEMICONDUCTOR ELEMENTS ARSENIC AND INDIUM INDUCE APOPTOSIS IN RATTHYMOCYTES

Citation
J. Bustamante et al., THE SEMICONDUCTOR ELEMENTS ARSENIC AND INDIUM INDUCE APOPTOSIS IN RATTHYMOCYTES, Toxicology, 118(2-3), 1997, pp. 129-136
Citations number
21
Categorie Soggetti
Toxicology,"Pharmacology & Pharmacy
Journal title
ISSN journal
0300483X
Volume
118
Issue
2-3
Year of publication
1997
Pages
129 - 136
Database
ISI
SICI code
0300-483X(1997)118:2-3<129:TSEAAI>2.0.ZU;2-7
Abstract
Indium arsenide and gallium arsenide are important new materials in th e semiconductor industry due to their superior electronic properties i n comparison with the older silicon-based materials. Animal experiment s have shown that exposure to these compounds induces marked alteratio ns in gene expression and immune response. Toxicity to the immune syst em has frequently been related to T and B cell apoptosis. In the prese nt study we show that the semiconductor elements indium (In) and arsen ic (As) are able to induce apoptosis in rat thymocytes in vitro. The r esults show that exposure to InCl3 (1, 10, or 100 mu M) or Na AsO2 (0. 01, 0.1, or 1 mu M) induced DNA laddering after 6 h of incubation with out compromising cell viability. These results were corroborated by fl ow cytometry analysis of propidium iodide-loaded cells, showing a typi cal high hypodiploid DNA peak in apoptotic thymocytes. Higher doses of In (1 mM) or As (10-100 mu M) induced cell death by necrosis. These d ata indicate that In and As can induce apoptosis and necrosis in T lym phocytes in a dose-dependent manner, which may be of relevance for the ir immunotoxicity. (C) 1997 Elsevier Science Ireland Ltd.