0.1-MU-M GATE-LENGTH ALINAS GAINAS/GAAS MODFET MMIC PROCESS FOR APPLICATIONS IN HIGH-SPEED WIRELESS COMMUNICATIONS/

Authors
ROHDIN H NAGY A ROBBINS V SU CY WAKITA AS SEEGER J HWANG T CHYE P GREGORY PE BAHL ST KELLERT FG STUDEBAKER LG DAVANZO DC JOHNSEN S
Citation
H. Rohdin et al., 0.1-MU-M GATE-LENGTH ALINAS GAINAS/GAAS MODFET MMIC PROCESS FOR APPLICATIONS IN HIGH-SPEED WIRELESS COMMUNICATIONS/, HEWLETT-PAC, 49(1), 1998, pp. 37-38
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation","Computer Science Hardware & Architecture
Journal title
HEWLETT-PACKARD JOURNAL
ISSN journal
00181153 → ACNP
Volume
49
Issue
1
Year of publication
1998
Pages
37 - 38
Database
ISI
SICI code
0018-1153(1998)49:1<37:0GAGMM>2.0.ZU;2-2
Abstract
To ensure high performance of MODFETs used in HP's high-speed communic ations applications, their high-frequency signal, noise, and power cha racteristics must be optimized.