AN ENHANCEMENT-MODE PHEMT FOR SINGLE-SUPPLY POWER-AMPLIFIERS

Authors
WU DW WEI JS SU CY PARKHURST RM FU SL CHANG SS LEVITSKY RB
Citation
Dw. Wu et al., AN ENHANCEMENT-MODE PHEMT FOR SINGLE-SUPPLY POWER-AMPLIFIERS, HEWLETT-PAC, 49(1), 1998, pp. 39-51
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation","Computer Science Hardware & Architecture
Journal title
HEWLETT-PACKARD JOURNAL
ISSN journal
00181153 → ACNP
Volume
49
Issue
1
Year of publication
1998
Pages
39 - 51
Database
ISI
SICI code
0018-1153(1998)49:1<39:AEPFSP>2.0.ZU;2-6
Abstract
To address the growing handset power amplifier needs for the emerging Personal Communications Services (PCS) markets, a 3-volt, single-suppl y, enhancement-mode pseudomorphic high-electron-mobility transistor (E -PHEMT) has been developed. The device exhibits +33-dBm output power a nd 65% drain efficiency at 1.88 GHz.