THE EVOLUTION OF THE SUBSTRATE-DRAIN JUNCTION PARAMETERS DURING ELECTRICAL AGING FOR N-MOS TRANSISTOR CHARACTERIZATION

A new method was used to investigate hot carrier degradation of submic rometre n-MOS transistors. A change in the current-voltage characteris tics of the substrate-drain junction after electrical ageing has been observed and analysed. Parameters of the junction are extracted and th eir measurement after ageing introduces an approach for quantifying th e magnitude of the degradation of the device. Degradation processes in volving injected carriers have been related to existing defects at the insulating oxide edges in the gate-to-drain overlap region, The metho d is easy to implement in a control process for device characterizatio n.