STABILITY AND ELECTRONIC-STRUCTURE OF THE CINNABAR PHASE IN GAAS

Citation
Aa. Kelsey et al., STABILITY AND ELECTRONIC-STRUCTURE OF THE CINNABAR PHASE IN GAAS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2029-2032
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
4
Year of publication
1998
Pages
2029 - 2032
Database
ISI
SICI code
0163-1829(1998)57:4<2029:SAEOTC>2.0.ZU;2-5
Abstract
We have performed nb initio pseudopotential calculations to investigat e the pressure-induced phase transitions in GaAs in the light of the r ecent experimental observation of a stable cinnabar structure. We find that a cinnabar structure is metastable with respect to other candida te structures, although extremely close to stability for pressures in the region of 16 GPa. This is in good agreement with experiment, where it has been observed to coexist with the zinc-blende and Cmcm phases in this pressure regime. It had been suggested that the cinnabar struc ture is the only known semiconducting high-pressure phase in a III-V c ompound. We perform band-structure calculations on this high-pressure structure and confirm that the material is semiconducting.