THERMALLY ASSISTED HOLE TUNNELING AT THE AU-SI3N4 INTERFACE AND THE ENERGY-BAND DIAGRAM OF METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES

Authors
GRITSENKO VA MEERSON EE MOROKOV YN
Citation
Va. Gritsenko et al., THERMALLY ASSISTED HOLE TUNNELING AT THE AU-SI3N4 INTERFACE AND THE ENERGY-BAND DIAGRAM OF METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES, Physical review. B, Condensed matter, 57(4), 1998, pp. 2081-2083
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
57
Issue
4
Year of publication
1998
Pages
2081 - 2083
Database
ISI
SICI code
0163-1829(1998)57:4<2081:TAHTAT>2.0.ZU;2-I
Abstract
Thermally assisted tunneling of holes at the Au-Si3N4 interface was ex perimentally observed. The hole barrier of 1.6+/-0.2 eV and the effect ive masses for the hole and electron tunneling into silicon nitride ha ve been determined. A revised energy-band diagram of the metal-nitride -oxide-semiconductor structure is constructed.