MECHANISM FOR HYDROGEN DIFFUSION IN AMORPHOUS-SILICON

Citation
R. Biswas et al., MECHANISM FOR HYDROGEN DIFFUSION IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 57(4), 1998, pp. 2253-2256
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
4
Year of publication
1998
Pages
2253 - 2256
Database
ISI
SICI code
0163-1829(1998)57:4<2253:MFHDIA>2.0.ZU;2-1
Abstract
Tight-binding molecular-dynamics calculations reveal a mechanism for h ydro en diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their Si-Si bonds. The diffusing hydrogen carries with it a n ewly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the c enter of stretched Si-Si bonds, and can play a crucial role in hydroge n diffusion.