LEVEL-BROADENING EFFECTS ON THE INELASTIC LIGHT-SCATTERING SPECTRUM DUE TO COUPLED PLASMON-PHONON MODES IN DELTA-DOPED SEMICONDUCTORS

The Raman scattering intensity of delta-doped semiconductors is evalua ted. The dynamical response of the multisubband two-dimensional electr on system which is coupled to optical phonons;is calculated within the random-phase approximation. Our calculation shows that both intrasubb and and intersubband plasmon modes are strongly coupled to optical-pho non modes. Level broadening due to high impurity concentration modifie s the inelastic light scattering spectrum significantly. However, a fe w scattering peaks corresponding to phonon-like modes can be observed even at large broadening.