Gq. Hai et al., LEVEL-BROADENING EFFECTS ON THE INELASTIC LIGHT-SCATTERING SPECTRUM DUE TO COUPLED PLASMON-PHONON MODES IN DELTA-DOPED SEMICONDUCTORS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2276-2279
The Raman scattering intensity of delta-doped semiconductors is evalua
ted. The dynamical response of the multisubband two-dimensional electr
on system which is coupled to optical phonons;is calculated within the
random-phase approximation. Our calculation shows that both intrasubb
and and intersubband plasmon modes are strongly coupled to optical-pho
non modes. Level broadening due to high impurity concentration modifie
s the inelastic light scattering spectrum significantly. However, a fe
w scattering peaks corresponding to phonon-like modes can be observed
even at large broadening.