DIELECTRIC RESPONSE AND ITS LIGHT-INDUCED CHANGE IN UNDOPED ALPHA-SI-H FILMS BELOW 13 MHZ

Citation
Gz. Yue et al., DIELECTRIC RESPONSE AND ITS LIGHT-INDUCED CHANGE IN UNDOPED ALPHA-SI-H FILMS BELOW 13 MHZ, Physical review. B, Condensed matter, 57(4), 1998, pp. 2387-2392
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
4
Year of publication
1998
Pages
2387 - 2392
Database
ISI
SICI code
0163-1829(1998)57:4<2387:DRAILC>2.0.ZU;2-H
Abstract
The low frequency (<13 MHz) dielectric response and its light-induced change in undoped a-Si:H were investigated in detail. The dielectric c onstant epsilon (the real part) in this range decreases with illuminat ion time: following a stretched exponential law similar to that found for other light-induced changes. The saturation relative change was ab out 0.1-0.2 % for the measured samples. The change is fading away eith er after repeated illumination-annealing training or by aging at room temperature. The present results indicate some rearrangement of the wh ole Si network caused by light soaking.