Gz. Yue et al., DIELECTRIC RESPONSE AND ITS LIGHT-INDUCED CHANGE IN UNDOPED ALPHA-SI-H FILMS BELOW 13 MHZ, Physical review. B, Condensed matter, 57(4), 1998, pp. 2387-2392
The low frequency (<13 MHz) dielectric response and its light-induced
change in undoped a-Si:H were investigated in detail. The dielectric c
onstant epsilon (the real part) in this range decreases with illuminat
ion time: following a stretched exponential law similar to that found
for other light-induced changes. The saturation relative change was ab
out 0.1-0.2 % for the measured samples. The change is fading away eith
er after repeated illumination-annealing training or by aging at room
temperature. The present results indicate some rearrangement of the wh
ole Si network caused by light soaking.