ROUGHNESS SCALING OF PLASMA-ETCHED SILICON SURFACES

Authors
BRAULT P DUMAS P SALVAN F
Citation
P. Brault et al., ROUGHNESS SCALING OF PLASMA-ETCHED SILICON SURFACES, Journal of physics. Condensed matter, 10(1), 1998, pp. 27-32
Citations number
36
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
10
Issue
1
Year of publication
1998
Pages
27 - 32
Database
ISI
SICI code
0953-8984(1998)10:1<27:RSOPSS>2.0.ZU;2-2
Abstract
Atomic force microscopy reveals scaling behaviour of silicon surfaces etched by plasma. The experimental results are compared with some theo retical models. It is shown that plasma-induced roughness is driven by a phenomenon that can be described by shadowing instabilities resulti ng in columnar microstructure growth. The same scaling properties as a re predicted by a growth model are obtained.