CONDUCTION PROCESSES IN CRYSTALLINE NIXSI1-X FILMS

Citation
C. Segal et al., CONDUCTION PROCESSES IN CRYSTALLINE NIXSI1-X FILMS, Journal of physics. Condensed matter, 10(1), 1998, pp. 123-134
Citations number
43
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
10
Issue
1
Year of publication
1998
Pages
123 - 134
Database
ISI
SICI code
0953-8984(1998)10:1<123:CPICNF>2.0.ZU;2-C
Abstract
The electrical conductivity and magnetoconductance (MC) have been meas ured in crystalline nickel-silicon (c-NixSi1-x) films as a function of nickel content, x. An abrupt decrease in the conductivity is observed at the metal-insulator transition where x(c) approximate to 13.5 at.% Ni. The discontinuity is explained in terms of a percolation model. A bove 4 K, the magnetoconductance (MC) is negative and arises from an e lectron-electron interaction contribution and a weak-localization cont ribution involving strong spill-orbit scattering. Below 4 K, the magne toconductance rapidly becomes positive. These low-temperature MC data can be explained using a model of electrons scattering from superparam agnetic particles, first introduced by Gittleman et al.