A precision spectrometer was used to measure the spectral reflectance
of a silicon photodiode over the wavelength range from 250 to 850 nm.
The results were compared with the corresponding values predicted by a
model based on thin-film Fresnel formulas and the known refractive in
dices of silicon and silicon dioxide. The good agreement at the level
of 2 x 10(-3) in the visible wavelength range verifies that the reflec
tion model can be used for accurate extrapolation of the spectral refl
ectance and responsivity of silicon photodiode devices. In addition, c
haracterization of the photodiode reflectance in the ultraviolet regio
n improves the accuracy of the spectral irradiance measurements when f
ilter radiometers based on trap detectors are used. (C) 1998 Optical S
ociety of America.