PHONON-PLASMON INTERACTION IN GAN FILMS STUDIED BY RAMAN-SCATTERING

Authors
SHEN CC SHU CK LIN HC CHEN WK CHEN WH LEE MC
Citation
Cc. Shen et al., PHONON-PLASMON INTERACTION IN GAN FILMS STUDIED BY RAMAN-SCATTERING, Zhongguo wuli xuekan, 36(1), 1998, pp. 27-31
Citations number
13
Categorie Soggetti
Physics
Journal title
Zhongguo wuli xuekan → ACNP
ISSN journal
05779073
Volume
36
Issue
1
Year of publication
1998
Pages
27 - 31
Database
ISI
SICI code
0577-9073(1998)36:1<27:PIIGFS>2.0.ZU;2-A
Abstract
GaN films of different buffer thicknesses (from 0 to 600 Angstrom) wer e grown on (0001) sapphire using MOCVD. The epitaxial films show autod oping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering revea ls that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction.