PERIODIC MULTILAYERS MOSI2 SI WITH A LARGE NUMBER OF PERIODS/

Different approaches to decreasing mechanical stresses developed in Mo Si2/Si multilayers with increase of number of periods due to structura l reconstruction in layers of amorphous silicon and nano-crystalline M oSi2 were studied by scattering CuK alpha X-ray radiation at small and large angles, cross-sectional electron microscopy and micrometry of s ubstrate sag. It was shown that effective relaxation of mechanical str esses in MoSi2/Si multilayers is achieved by annealing them at similar to 320 degrees C during 1 hour, or by deposition of layers at substra te temperature similar to 320 degrees C, or by increasing sputtering g as pressure up to 7 x 10(-3) Torr in case of argon. Optimal conditions for deposition of MoSi2/Si multilayers with periods N > 10(3) and hig h reflectivity of X-rays with wavelengths 12.4-20.0 nm are: substrate temperature T-s = 220 degrees C, argon pressure P-Ar, = 3 x 10(-3) Tor r; layer deposition rate 1 nm/s.