POSSIBLE MECHANISMS FOR 4 3 DOMAIN MATCHING EPITAXY IN IONICALLY BONDED SYSTEMS/

Authors
JIANG WB NORTON MG
Citation
Wb. Jiang et Mg. Norton, POSSIBLE MECHANISMS FOR 4 3 DOMAIN MATCHING EPITAXY IN IONICALLY BONDED SYSTEMS/, Philosophical magazine letters, 75(5), 1997, pp. 255-260
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
75
Issue
5
Year of publication
1997
Pages
255 - 260
Database
ISI
SICI code
0950-0839(1997)75:5<255:PMF43D>2.0.ZU;2-W
Abstract
Two mechanisms for 4:3 domain matching epitaxy in ionically bonded sys tems are postulated through analysis of the TiN-NaCl system. The mecha nisms are termed the 'reconstruction mechanism' and the 'antiphase bou ndary (APB) mechanism'. The reconstruction mechanism involves restrict ed movement of the ions and the concomitant formation of double-plane dislocations in the epilayer. In the APB mechanism single-plane disloc ations will be produced along with a characteristic energy because the nearest-neighbour coordination has been destroyed.