LOW-FREQUENCY NOISE IN BETA-FESI2 N-SI HETEROJUNCTIONS/

Low frequency noise of beta-FeSi2/n-Si heterojunctions has been system atically studied with the silicide layer formed by conventional furnac e and rapid thermal annealing processes. The noise was found to exhibi t 1/f behavior attributed to fluctuations of the generation-recombinat ion current at the interface states, It is shown that noise measuremen ts provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state den sity is significantly reduced when the silicide is formed by rapid the rmal annealing process. (C) 1998 American Institute of Physics.